METHOD OF FORMING METAL OXIDE NANOSTRUCTURES ON A TiN-BUFFERED SUBSTRATE

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METHOD OF FORMING METAL OXIDE NANOSTRUCTURES ON A TiN-BUFFERED SUBSTRATE

  • US 11,976,365B1

  • الصحة - Health

  • 2024

  • مكتب البراءات الأمريكي - US Patent Office

  • Faheem Ahmed, Al-Ahsa (SA); Nishat Arshi, Al-Ahsa (SA); Shalendra Kumar, Al-Ahsa (SA); Nagih Mohammed Shaalan, Al-Ahsa (SA); Ghazzai Almutairi, Al-Ahsa (SA); P. M. Z. Hasan, Al-Ahsa (SA); Naushad Ahmad, Al-Ahsa (SA); Thamraa Alshahrani, Al-Ahsa (SA); Afzal Hussain, Al-Ahsa (SA)

  • A method of forming one-dimensional metal oxide nanostructures includes forming a TiN film on a substrate to provide a TiN-coated substrate; providing an aqueous mixture including hexamethylenetetramine and a metal nitrate; contacting the TiN-coated substrate with the aqueous mixture such that the TiN film on the substrate is in the aqueous mixture; and heating the aqueous mixture at a temperature ranging from about 50°C to about 100°C for a period of time ranging from about 60 minutes to about 180 minutes to form the metal oxide nanostructures. The method offers a low-temperature approach for the growth of metal oxide nanostructures.